Todd G. Ruskell, Mark J. Gallagher, Dong Chen, and Dror Sarid, Optical Sciences Center, University of Arizona, Tucson, Ariz.
We show that the temporal response of photoexcited charge carriers in semiconductor structures can be probed by scanning tunneling microscopy (STM) on a nanosecond time scale. The results presented here complement previous work in which static and dynamic surface photovoltage (SPV) at semiconductor surfaces were measured using an STM operating in the tunneling and capacitance modes, respectively. Note that optically induced picosecond switching of an STM that probed a metal surface has also been reported.
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