Polarization Switching of InGaAsP/lnP Lasers in the Gigahertz Range

A. Klehr, R. Müller, M. Voss, and A. Barwolff, Max-Born-lnstitut für Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany

Optical computing and fiber-optic communication systems need fast optical switches and memories. Potential candidates for such devices are InGaAsP/lnP semiconductor lasers that can be directly switched between the TE and TM polarization modes (electric field parallel or perpendicular, respectively, to the junction plane) with high extinction ratios by changing the injection current.

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