Arturo Chavez-Pirson, Hiroaki Ando, Hisao Soito, and Hiroshi Kanbe, NTT Basic Research Laboratories, Atsugi-shi, Kanagawa, Japan
High efficiency, low current threshold semiconductor lasers are attractive for many applications in communications, optical processing, and optical interconnects. Recent efforts to produce such lasers rely on either strong electronic or optical confinement to more completely couple the material states or cavity modes into the lasing process. For example, quantum confinement in one-dimensional quantum wires concentrates the electronic density of states into a narrow wavelength band.
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