Federico Capasso and Jerome Faist, AT&T Bell Laboratories, Murray Hill,
In semiconductor diode lasers, light is generated by the recombination of electrons and holes injected into the active layer by means of a p-n junction. In this process, electrons from filled states in the conduction band make a transition to empty states in the valence band (holes), emitting laser photons of energy equal to the energy bandgap.
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