Non-Markovian Memory Effects in GaN Semiconductor Optical Amplifiers

The physics of group III nitrides, like A1N and GaN, is currently coming out of its infancy and has been receiving a great deal of attention lately, primarily because of the use in short-wavelength laser diodes. Subsequently, and as a consequence of the growth technology of GaN and related devices, high-efficiency light-emitting diodes have been developed. Moreover, emission wavelengths between 390-430 nm have been observed at room temperatureā€”the lowest ever demonstrated by a semiconductor laser.

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