S. Hughes, Dept. of Physics, Washington State Univ., Pullman, Wash.
The physics of group III nitrides, like A1N and GaN, is currently coming out of its infancy and has been receiving a great deal of attention lately, primarily because of the use in short-wavelength laser diodes. Subsequently, and as a consequence of the growth technology of GaN and related devices, high-efficiency light-emitting diodes have been developed. Moreover, emission wavelengths between 390-430 nm have been observed at room temperature—the lowest ever demonstrated by a semiconductor laser.
Become a member of OSA or log in to view the full text of this article.
OSA Members get the full text of Optics & Photonics News, plus a variety of other member benefits.