Non-Markovian Memory Effects in GaN Semiconductor Optical Amplifiers

S. Hughes, Dept. of Physics, Washington State Univ., Pullman, Wash.

The physics of group III nitrides, like A1N and GaN, is currently coming out of its infancy and has been receiving a great deal of attention lately, primarily because of the use in short-wavelength laser diodes. Subsequently, and as a consequence of the growth technology of GaN and related devices, high-efficiency light-emitting diodes have been developed. Moreover, emission wavelengths between 390-430 nm have been observed at room temperature—the lowest ever demonstrated by a semiconductor laser.

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