Polarization Dependence of Ultrafast Nonlinear Refraction in Semiconductors at the Half-Bandgap

All-optical switching using half-bandgap non-linearities in semiconductors has received an increasing amount of attention. This is due to an increased understanding of the nonlinear optical mechanisms (in particular, AlGaAs at communication wavelengths has a relatively large nonlinear refraction coefficient—on the order 10^3 times larger than silica) and the maturing of fabrication technologies which allow development of efficient all-optical devices in the 1.55 μm telecommunications window.

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