W. W. Chow, Sandia National Labs, Albuquerque, N.M., and A. Knorr and S. W. Koch, Fachbereich Physik, Philipps Universität Marburg, Marburg, Germany
Semiconductor lasers based on wide-bandgap semiconductor compounds have substantial application potential because they can provide output with wavelengths covering almost the entire optical spectrum, including the range from green/blue to ultraviolet. At present, operation of II-VI semiconductor lasers has been demonstrated at room temperature with injection current pumping. Light emitting diodes (LEDs) based on group III-nitride heterostructures are commercially available, and lasing in bulk GaN was recently achieved using optical pumping.
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