H.Z. Chen, J. Paslaski, H. Morko and A. Yariv
High performance GaAs/AlGaAs lasers and detectors have been fabricated for the first time on Si substrates. This important development establishes the feasibility of bringing together monolithically the electronic switching technology of Si and the optoelectronic technology of GaAs/AlGaAs, thereby opening the way to a new class of integrated optoelectronic circuits and to optical interconnect technology.
Access to the full text of this article is restricted. In order to view this article please log in.