Feature
High Power Ingaasp-Based Laser Diodes
A growth technique adopted from the semiconductor industry combined with a new mixture of materials has made lifetimes in excess of 100 years possible for high-power near-infrared semiconductor lasers. This remarkable reliability and other attractive features may not only bring down the cost but also open up new dimensions in the laser markets and applications in human life, industry, and science.
Log in or become a member to view the full text of this article.
This article may be available for purchase via the search at Optica Publishing Group.
Optica Members get the full text of Optics & Photonics News, plus a variety of other member benefits.