J. M. DePuydt, M. A. Haase, J. Qiu, and H. Cheng
One current trend in laser diode research is to push toward shorter wavelengths. Due to limitations in their bandgaps, it is not likely that the III-V compound semiconductors will produce lasers with emission wavelengths significantly shorter than 600 nm. Therefore, the quest for green and blue injection lasers is forcing researchers to look elsewhere. Our recent demonstration of 490-535 nm laser diodes from ZnSe-based materials suggests that a new era of laser development using the wide bandgap II-VI semiconductors has begun.
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