Strain-induced lateral confinement of excitons in semiconductor quantum wells
There is a worldwide effort to achieve efficient and controlled confinement of carriers to "quantum wires" and "quantum dots". Use of these structures, of dimensionality lower than the by-now-familiar quantum
wells, is expected to improve the performance of lasers
and nonlinear optical devices. With varying degrees of
success, teams of researchers have made quantum wires
and dots in various ways—for example, by etching freestanding
structures, by defining buried structures by ion implantation, and by growing them directly on patterned or unpatterned substrates.
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